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| savantic semiconductor product specification silicon pnp power transistors 2sb649 2SB649A d escription with to-126 package complement to type 2sd669/669a high breakdown voltage v c eo: -120/-160v high current -1.5a low saturation voltage,excellent h fe linearity applications for low-frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sb649 -180 v cbo collector-base voltage 2SB649A open emitter -180 v 2sb649 -120 v ceo collector-emitter voltage 2SB649A open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -1.5 a i cm collector current-peak -3 a t a =25 1 p d total power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2sb649 2SB649A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sb649 -120 v (br)ceo collector-emitter breakdown voltage 2SB649A i c =-10ma; r be = b -160 v 2sb649 -180 v (br)cbo collector-base breakdown voltage 2SB649A i c =-1m a ;i e =0 -180 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5a ;i b =-50ma -1.0 v v be base-emitter voltage i c =-150ma ; v ce =5v -1.5 v i cbo collector cut-off current v cb =-160v; i e =0 -10 a 2sb649 60 320 h fe-1 dc current gain 2SB649A i c =-150ma ; v ce =-5v 60 200 h fe-2 dc current gain i c =-0.5a ; v ce =-5v 30 f t transition frequency i c =-150ma ; v ce =-5v 140 mhz c ob collector output capacitance f=1mhz ; v cb =-10v 27 pf h fe classifications h fe-1 b c d 2sb649 60-120 100-200 160-320 2SB649A 60-120 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2sb649 2SB649A package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2sb649 2SB649A |
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